Response of Nanowire Sensors to Adsorption of Neutral Particles
M. A. Il’nitskii, O. V. Naumov, L. N. Safronov, V. P. Popov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
ilnitsky@isp.nsc.ru
Keywords: nanowires, silicon-on-insulator, sensor, computer simulation
Pages: 119-125
Abstract
Results of numerical 2D and 3D-simulations of the performance of nanowire sensors on the basis of silicon-on-insulator structures aimed at determining the optimum conditions for the response to dielectric particles, are given. The effect of screening of nanowires by dielectric particles in solutions with pH = 7 used as a medium for transporting biological objects is considered
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