Increasing the Mechanical Strength of Hybrid Photodetectors Based on Mercury—Cadmium—Telluride Heteroepitaxial Layers
A. R. Novoselov, I. G. Kosulina, A. G. Klimenko, N. A. Valisheva, V. V. Vasil’ev, S. A. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
novoselov@isp.nsc.ru
Keywords: photodetector, heteroepitaxial layers of mercury—cadmium—tellurium, indium bumps
Pages: 111-118
Abstract
Results of the research aimed at improving the strength of hybrid photodetectors (PD) based on mercury—cadmium—telluride heteroepitaxial layers are presented. It is shown that annealing of silicon multiplexers at 157 ºC in a hydrogen flow in vacuum changes the shape of indium bumps to hemispherical and levels off their mechanical properties over the plate. Controlled recovery of the natural curvature of silicon multiplexer plates and photosensitive element arrays in hybrid photodetectors at 120 ºC extends their operation time. A sequence of technological operations on PD hybridization providing an increase in the efforts needed for separating photosensitive elements from silicon multiplexers at least by 75 % compared to the PD with fused indium bumps is proposed
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