Spectroscopy of the Cross Section of Inelastic Scattering of Electrons in SiO2/Si(100) Layered Systems
A. S. Parshin1, S. A. Kushchenkov1, O. P. Pchelyakov2, Y. L. Mikhlin3, T. Khasanov2
1 Reshetnev Siberian State Aerospace University
2 Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
3 Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences
aparshin@sibsau.ru
Keywords: electron spectroscopy, cross section of inelastic scattering of electrons, mean free path of electrons
Pages: 88-92
Abstract
Spectra of the cross section of inelastic scattering of electrons (product of the mean free path of inelastic scattering and its differential cross section) are obtained for SiO2/Si(100) layered structures from experimental spectra of energy losses of reflected electrons with different energies of primary electrons. Computer simulations of the spectra of the cross section of inelastic scattering of reflected electrons for these layered structures are performed with the use of the dielectric function of the film and substrate materials. It is found that the SiO2 layer thickness determined through comparisons of experimental and model spectra agrees with results of ellipsometric measurements.
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