Numerical Modeling of GaAs Field-Effect Transistor Characteristics as Functions of Channel Doping Profile Parameters
A. K. Shestakov, K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
shestakov@thermo.isp.nsc.ru, zhur@thermo.isp.nsc.ru
Keywords: FET, modeling, ion implantation
Pages: 124-128
Abstract
Gallium arsenide ion-doped field-effect transistors with a Schottky barrier and various doping profiles are modeled. Dependences of static transistor characteristics on doping profile parameters are calculated and analyzed. The physical processes that determine the transistor characteristics with variation in doping profile parameters are studied.
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