Holographic Study of Thermal Strains of Microelectronic Components
L. A. Borynyak, Y. K. Nepochatov, Y. G. Peisakhovich, N. Y. Petrov
Novosibirsk State Technical University
borynyak_leonid@mail.ru, bor@ref.nstu.ru, yugp@rambler.ru, Antofagus@mail.ru
Keywords: holographic interferometry, measurements of thermo-mechanical strains, solid-state electronics, polarization control method, tensometry, power electronics
Pages: 72-81
Abstract
Results of a study of elements of solid-state electronics by holographic interferometry are presented. Examples of measurement of thermal strains of real products and control of engineering processes in the production of static induction transistors (SITs) and ultra-high frequency hybrid integrated circuits are given.
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