Dependences of the Optical Characteristics of AlxGa1−xN Films on the Substrate Composition and Polarity
S. N. Svitasheva, K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Svitasheva@thermo.isp.nsc.ru, zhur@thermo.isp.nsc.ru
Keywords: spectroscopic ellipsometry, nitrides of triple compounds, polarity, molecular beam epitaxy, heterostructures
Pages: 82-87
Abstract
Optical properties of Ga- and N-polar triple nitrides AlxGa1−xN with molar fractions of aluminum from 0 to 0.6 are studied by a nondestructive contactless method of spectroscopic ellipsometry. Correlation dependences of the shift of the fundamental absorption edge and the behavior of the real and imaginary parts of the pseudodielectric function on the composition x and polarity of the AlxGa1−xN layers are revealed. It is verified that the polarity of the layers grown by molecular beam epitaxy is defined by the formation of the AlN nucleating layer.
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