Efficiency of Generation of Terahertz Radiation in GaAs, InAs, and InSb Crystals
V. D. Antsygin, N. A. Nikolaev
Institute of Automation and Electrometry Siberian Branch Russian Academy of Sciences
nazar@iae.nsk.su
Keywords: generation of terahertz radiation, photo-Dember effect
Pages: 23-30
Abstract
Pulsed generation of terahertz radiation in GaAs, InAs, and InSb semiconductors under the action of femtosecond laser radiation at the wavelength of 775 nm is studied. The generation efficiency is shown to increase by a factor of 2.7 if InAs is placed into a magnetic field of 0.8 T. An increase in the generation efficiency by the mechanism of optical rectification in InAs samples with the 〈111〉 orientation is demonstrated.
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