Finding Optical Constants for MBE GaAs n-Type GaAs Films between 1.50-4.75 eV
S. N. Svitasheva
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: Svitasheva@thermo.isp.nsc.ru
Pages: 571-577
Abstract
The width and spectral dependence of the complex refractive index of upper layers in thin-film MBE-grown GaAs structures can be measured by means of spectral ellipsometry, that is, a nondestructive noncontact optical method, using an oscillatory model of dielectric function.
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