GROWING HgTe/Cd0.735Hg0.265Te QUANTUM WELLS BY MOLECULAR BEAM EPITAXY
S. A. Dvoretsky1, D. G. Ikusov1, D. Kh. Kvon1, N. N. Mikhailov1, N. Dai2, R. N. Smirnov1, Yu. G. Sidorov1, and V. A. Shvets1
1Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: mikhailov@isp.nsc.ru
2Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
Pages: 375-381
Abstract
HgTe/Cd0.735Hg0.265 nanostructures with HgTe quantum wells 16.2 and 21.0 nm thick are grown without additional doping on (013)CdTe/ZnTe/GaAs substrates by the method of molecular beam epitaxy. The compositions and thicknesses of the wide-gap layer and quantum well in the course of growth are performed by means of ellipsometry. The accuracy is Dx ≈
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