REVERSE CURRENT IN p
V. N. Ovsyuk and A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 363-369
Abstract
Results of measuring the current-voltage characteristics of diodes with a control electrode are presented. The diodes are based on graded energy-gap Cd0.22Hg0.78Te (MCT) layers grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate. The diodes are designed for the IR radiation photodetectors with the cutoff wavelength lc = 10 mm. It is shown that the surface currents contribute substantially to the reverse currents of MBE MCT photodiodes during enrichment and depletion. A critical built-in charge density value for which the surface leakage level is under 20% of bulk current is obtained.
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