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Avtometriya

2007 year, number 4

PECULIARITIES OF ADMITTANCE IN MOS STRUCTURES BASED ON MBE-GROWN MCT LAYERS

A. V. Yartsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia E-mail: jartsev@ngs.ru
Pages: 358-362

Abstract

Admittance of MOS structures based on Hg1