Potential distribution in thin layers of with graded gap regions
T.E. Kovalevskaya and V.N. Ovsyuk
Novosibirsk
Pages: 50-60
Abstract
A simplified method for evaluation of potential distribution in thin graded gap layers of a photosensitive semiconductor is proposed. Formation of space charge regions in a semiconductor film with a graded gap layer in its middle part, and also with graded gap layers near external surfaces, which are used to control the characteristics of planar photodiodes and to suppress the surface recombination in IR photodetector arrays based on epitaxial MCT layers is considered in a linear approximation.
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