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Avtometriya

2003 year, number 2

Ellipsometric control of growth of nanostructures on the basic of CdxHg1-x Te

N.N.Mikhailov, V.A.Shvets, S.A.Dvoretsky, E.V.Spesivtsev, Yu.G.Sidorov, S.V.Rykhlitsky, and R.N.Smirnov
Novosibirsk
Pages: 60–67

Abstract

Nanoscale potential barriers and wells on the basis of solid CdxHg1-x Te (MCT) solutions have been grown by molecular-beam epitaxy with in situ precision ellipsometric control of the thickness and composition of the layers. Decaying oscillations of ellipsometric parameters are observed during MCT growth with a variable molecular flux of tellurium. A comparison of experimental and calculated data allows one to determine the MCT composition of a thin layer corresponding to a potential barrier of well and its thickness, and evaluate the sharpness of boundaries. It is demonstrated that the grown potential barriers and wells with different MCT compositions, whose thickness varies from 2 to several dozens of nanometers, have sharp boundaries within one monolayer.