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Avtometriya

2025 year, number 6

1.
FORMATION OF COMPOSITE STRUCTURES OF Si WITH A3B5 NANOPARTICLES FOR NEAR INFRARED PHOTOELECTRONICS

R.I. Batalov1, V.V. Bazarov1, E.M. Begishev1, N.M. Lyadov1, H.A. Novikov1, R.F. Likerov1, I.M. Podlesnykh2, S.G. Simakin3
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center, Russian Academy of Sciences, Kazan, Russia
2Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia
3Valiev Institute of Physics and Technology of the National Research Center «Kurchatov Institute», Yaroslavl branch, Yaroslavl, Russia
Keywords: silicon, indium arsenide, ion implantation, thermal annealing, pulsed ion-beam treatment (PIBT), melting, crystallization, optical absorption, photoresponse, infrared photodiode

Abstract >>
Composite silicon (Si) layers containing a synthesized narrow-bandgap indium arsenide (InAs) phase are of interest from the viewpoint of extending the optical absorption region and photoresponse of Si to the near and mid-IR region (λ = 1-3.5 μm). In this work, we investigate single-crystal Si layers subjected to sequential implantation with In+ and As+ ions followed by thermal annealing in a furnace (solid-phase crystallization) or pulsed nanosecond annealing with a C+/H+ ion beam (liquid-phase crystallization). By means of scanning electron microscopy, secondary ion-mass spectrometry, x-ray diffraction, optical infrared spectroscopy, and photoconductivity methods, the structural, optical, and photoelectric properties of the composite layers are studied. It is shown that pulsed annealing leads to deep diffusion of As atoms into Si to 1 μm with the formation of a solid solution Si:As, and the In impurity is pushed to the surface. Thermal annealing leads to a slight redistribution of impurities and to the formation of secondary phases of InAs and In2O3. In both cases, a high electron concentration (~ 2 × 1020 cm-3) is achieved, and an intense absorption band with a maximum at 3.6 μm is detected. The photoresponse spectra of the mesa diodes at 300 K show a photosensitivity region of 0.5-1.2 μm, comparable with a typical Si photodiode. No photoresponse was detected in the region of 1.2-2.4 μm.



2.
MODULATION OF THZ RADIATION BASED ON THE SEMICONDUCTOR-METAL PHASE TRANSITION IN VANADIUM DIOXIDE

S.G. Bortnikov1, V.V. Gerasimov2,3, D.V. Dmitriev1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
Keywords: modulation of THz radiation, vanadium dioxide, semiconductor-metal phase transition, Novosibirsk free electron laser

Abstract >>
The method of THz radiation modulation based on the semiconductor-metal phase transition in vanadium dioxide (VO2) is explored. Thermal heating of the VO2 film on the silicon substrate above the metallic state temperature results in ~80% reduction of THz radiation transmission. For two-electrode VO2 film structures with a millimeter-sized interelectrode gap, heating the film by electric current leads to ~42% transmission reduction only. At the same time, due to heating of the VO2 film substrate, a slow (seconds-running) cooling process and the reverse transition of the film to the semiconductor state occur. To increase the modulation frequency up to hundreds of kHz, it is proposed to create a structured system of separated micron-sized VO2-elements instead of a continuous film, which allows for much faster cooling of such elements confirmed experimentally.



3.
INVESTIGATION OF THE TEMPERATURE- AND ELECTRICALLY-INDUCED PHASE TRANSITION IN VANADIUM DIOXIDE BY ELLIPSOMETRY METHODS

K.E. Kapoguzov1,2, V.B. Kalinina1,2, I.A. Azarov1,2, A.E. Gayduk1, V.N. Kichay3, L.V. Yakovkina3, S.V. Mutilin1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: vanadium dioxide, semiconductor-metal phase transition, ellipsometry, numerical analysis methods, electro-optical switching

Abstract >>
In this work, we study the temperature- and electrically-induced phase transition in thin vanadium dioxide films by spectral and microellipsometry methods. It is shown that the resistance of the vanadium dioxide film changes dramatically, by more than three orders of magnitude, at a temperature of about 67 °C, which is associated with the semiconductor-metal phase transition. Using the developed numerical algorithm for solving the inverse ellipsometry problem, the spectral dependences of the refractive n(λ) and absorption k(λ) indices for the semiconductor and metallic phases of vanadium dioxide are calculated from experimentally determined parameters Ψ and Δ. In the ultraviolet and visible regions of the spectrum, the changes in n and k are found to be insignificant upon heating, whereas in the near-infrared range there is a sharp redistribution of the optical response associated with the phase transition in vanadium dioxide. It is shown that the greatest changes in the refractive and absorption indices occur at a wavelength of 1100 nm and range from 2.94 to 1.57 and from 0.91 to 1.95, respectively. A reversible change in the parameters Ψ and Δ is detected by microellipsometry during the electrically initiated formation of a thin conductive filament in vanadium dioxide between two contact pads. The results obtained demonstrate the promise of vanadium dioxide for use in tunable optical and optoelectronic devices in the near and middle infrared ranges.



4.
HEAT FLUX SENSOR BASED ON THIN-FILM YBCO

D.A. Kolosovsky1, S.A. Ponomarev2, Yu.A. Zhivodkov2, V.A. Golyashov2, S.R. Yegiyan3, S.V. Starinskiy1
1Kutateladze Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Skolkovo Institute of Science and Technology, Moscow, Russia
Keywords: heat flux sensor, YBCO, pulsed laser deposition, transverse thermoelectric effect

Abstract >>
This work presents the design and experimental investigation of a prototype heat flux sensor based on a thin YBaCuO film deposited by pulsed laser deposition onto single-crystal Al2O3(1̅102) substrates. A technologically simple approach is proposed for producing oriented YBCO films without expensive miscut substrates, enabling the realization of the transverse thermoelectric effect. Comprehensive studies of the morphology, phase composition, and thermoelectric properties of the films deposited at various substrate temperatures are carried out. The sensor prototype fabricated from the film grown at 700 °C demonstrates the maximum sensitivity of 177 μV∙cm2/W, comparable to that of reference water-cooled sensors.



5.
EFFECT OF SPECTRAL OVERLAP OF RESONANCES ON THE SWITCHING EFFICIENCY OF INFRARED HYBRID METAMATERIALS BASED ON VANADIUM DIOXIDE AND SILICON

N. A. Mironov1,2, A. E. Gayduk1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences Department of Physics, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Keywords: metamaterial, vanadium dioxide, Mie resonance, plasmon resonance, all-optical switching

Abstract >>
The work is aimed at numerical simulation of electromagnetic characteristics of multiresonant metamaterials, consisting of microresonators made of vanadium dioxide and silicon designed to operate in the infrared range. The dependence of the spectral response on the metamaterial geometric parameters and reflection coefficient contrast during the semiconductor-metal transition in vanadium dioxide is analyzed. It is shown that the electromagnetic response in the infrared range is determined by the Mie resonances, as well as by the plasmon and quasi-guided resonances. Hybrid metamaterials on silicon substrates can ensure higher reflection coefficient switching contrast in a wider spectrum compared to similar structures on quartz substrates. Spectral dependencies of the switching power threshold for metamaterials on quartz and silicon substrates are determined.



6.
INFLUENCE OF ANTIMONY AND INDIUM FLUXES ON THE PROCESS OF OXIDE DESORPTION FROM THE InSb SURFACE

M.A. Sukhanov, A.K. Bakarov, S.A. Ponomarev, V.A. Golyashov, D.V. Gulyaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: InSb, indium oxide, desorption, surface cleaning

Abstract >>
Cleaning the surface of InSb from oxides is an important step in epitaxial growth and post-growth technological processes, since the oxide layer leads to the formation of defects in epitaxial layers and degradation of device parameters. It is shown that cleaning the InSb surface from oxides by annealing in an indium flux reduces the maximum annealing temperature and surface roughness compared to thermal annealing in vacuum: the root mean square roughness of the InSb surface is found to be 1.2 nm after cleaning by annealing in vacuum at 400 °C and 0.9 nm after cleaning by annealing in an indium flux at 355 °C followed by annealing in vacuum at 380 °C. The lower surface roughness of the InSb substrates after the cleaning step improves the crystal quality of the grown epitaxial layers. Based on the in-situ monitoring of oxide desorption by high energy electron diffraction, it is shown that the antimony flux slows down the indium oxide desorption process, which leads to the necessity of increasing the maximum annealing temperature.



7.
OVERGROWTH OF N-POLAR INVERSION DOMAINS IN ALXGa1-XN LAYERS WITH DIFFERENT AL CONTENTS

I.V. Osinnykh1,2, T.V. Malin1, A.M. Gilinsky1, D.Yu. Protasov1,3, V.I. Vdovin1
1A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University,, Novosibirsk, Russia
3Novosibirsk State Technical University, Novosibirsk, Russia
Keywords: AlGaN, ammonia molecular beam epitaxy (MBE), scanning electron microscopy (SEM), transmission electron microscopy (TEM), ion etching, structural defects

Abstract >>
In this paper, we present the results of a study of AlxGa1-xN layers with different Al contents grown by ammonia molecular beam epitaxy on Al2O3 substrates using scanning electron microscopy and transmission electron microscopy. It is shown that the inversion domains from the AlN buffer layers do not grow to the film surface during further growth of AlxGa1-xN layers with Al contents x ≤ 0.2. In the AlxGa1-xN layers with 0.2 ≤ x ≤ 0.5, plateau-shaped defects extending to a height of more than 200 nm form above the inversion domains; at x ≥ 0.5, plateau-shaped defects extend through the entire AlxGa1-xN layers.



8.
ACCELERATED ALGORITHM FOR SOLVING THE DIRECT SCATTERING PROBLEM FOR THE WAVE EQUATION

L.L. Frumin1, A.E. Chernyavsky1,2
1Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Keywords: Helmholtz equation, direct scattering problem, implicit scheme, transfer matrix

Abstract >>
A numerical solution of the direct scattering problem for the one-dimensional Helmholtz equation is considered. Within the framework of the transfer matrix method, an implicit difference scheme for the transfer matrix of the second order of approximation accuracy is obtained by the integral method. Based on the duplication strategy, the convolution theorem, and the fast Fourier transform, an algorithm for the accelerated solution of the Helmholtz equation is presented, which asymptotically requires only O(Nlog2N) arithmetic operations. Numerical modeling of the scattering problem is performed using the example of an exponential smooth layer whose solution is known. Numerical simulation has confirmed the accuracy and high speed of the proposed algorithm, which is necessary in practical applications for optical and acoustic sensing of media in applied optics and acoustics.



9.
LIGHT SCATTERING ON A CHAIN OF CYLINDERS IN QUASISTATIC APPROXIMATION

A.S. Bereza, D.A. Shapiro
Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: plane wave scattering, array of parallel cylinders, quasi-static approximation, conformal mapping, plasmon resonance

Abstract >>
The subwavelength scattering of a plane electromagnetic wave normally incident onto an array of parallel cylinders is considered. If the wavelength is much longer than the lattice period, then a quasi-static approximation can be used. The solution for the electric field potential is presented as a series of the Laplace operator eigenfunctions. To find the coefficients of the series, a conformal mapping that drastically simplifies the boundary conditions is used. The result of solving the Laplace equation by the conformal mapping method is compared to the calculation of the wave problem in the COMSOL® Multiphysics. The quantitative difference between the electric field intensities obtained is less than 1% at a wavelength 60 times greater than the grating period.



10.
ACCURACY OF LOCALIZATION OF AREA AND LINEAR OBJECTS IN SPACE IMAGES

V. A. Grishin
Space Research Institute, Russian Academy of Sciences, Moscow, Russia
Keywords: space image registration, accuracy of matching algorithms, area and linear landmarks, vector reference images, Cramer-Rao estimation

Abstract >>
Image registration methods are widely used in processing satellite images of the Earth. This solves the problem of establishing the correspondence of images of the same landmark obtained from different distances, different angles, under different lighting conditions, at different times of the year, etc. This article presents a method for assessing the potential accuracy of localization of area and linear landmarks of significant sizes, which can be considered flat given the altitude of the orbit from which the survey is made. The accuracy of localization is determined depending on the shape of the vector reference image, its size, accuracy, and the accuracy of localization of the boundaries of the observed image of the object. It is shown that, under favorable conditions, it is possible to obtain subpixel accuracy of localization of area and linear objects of significant sizes.



11.
NONLINEAR CONTROL SYSTEM FOR ANGULAR MOTIONS OF A QUADROTOR VEHICLE

K. Yu. Kotov, Yu. N. Zolotukhin, E. V. Khodatovich, A. P. Yan
Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: quadcopter, attitude motion control, structural synthesis method, HIL modeling

Abstract >>
The problem of creating a control system for angular movements of a quadcopter that takes into account the transient process of traction motors is considered. Motion equations are obtained for a two-dimensional model of an apparatus mounted on a gyroscopic stand. This model takes into account the displacement of the vehicle rotation center relative to the center of mass and the transient process of the engines in the form of a first-order device reaction. A regulator based on the structural synthesis method is proposed, which ensures quadcopter setting in a given orientation. The algorithm effectiveness is confirmed by the results of HIL modeling, taking into account the noise and time delays of the real device.



12.
INTEGRATION OF INERTIAL AND OPTICAL NAVIGATION SYSTEMS WITH SPATIAL STABILIZATION OF A VIDEO CAMERA

S.V. Sokolov1,2, V.A. Pogorelov3, S.A. Shvidchenko2
1Rostov State University of Economics, Rostov-on-Don, Russia
2Moscow Technical University of Communications and Informatics, Moscow, Russia
3Don State Technical University, Rostov-on-Don, Russia
Keywords: inertial-optical navigation system, optical flow, velocity field, extended Kalman filter

Abstract >>
Jamming, as well as various types of spoofing of signals from satellite navigation systems, which are currently the most effective tools in terms of positioning accuracy for moving objects, create a need to search for alternative navigation methods that ensure both accuracy and autonomy in solving the navigation problem. Among such approaches, various methods of integrating inertial navigation systems (INS) with optical navigation systems (ONS) can be highlighted, as they ensure the maximum accuracy over long intervals of motion and the minimum cost. For objects moving along arbitrary trajectories (in the absence of terrain maps and reference points), the existing methods of processing information from optical navigation systems, obtained in the form of an optical flow velocity field, enable the estimation of the current object's velocity projections - both linear and angular. However, the application of traditional methods, firstly, does not allow solving the navigation problem as a whole (determining the object's coordinates and its spatial orientation angles) and, secondly, leads to computational costs that are often critical for onboard computers. In this regard, the article considers an approach that combines the capabilities of an inertial navigation system, which provides a comprehensive solution to the autonomous navigation problem, and a developed optical observer of the object's motion parameters. This observer allows for autonomous estimation of navigation parameters without preliminary calculation of the velocity field, i.e., with the minimal computational costs. For a more complete coverage of the problem, cases of rigid camera mounting on the object, as well as its two- and three-axis stabilization, are considered. The final synthesis of algorithms for stochastic estimation of the object's motion parameters, which accounts for the uncertainty of the probabilistic characteristics of noise in a real inertial-optical navigation system, is carried out considering the possibility of subsequent application of methods from the modern nonlinear filtering theory. Due to specific features that arose during the development of the considered inertial-optical navigation system - namely, the correlation between the object and observer noises - a variant of the extended Kalman filter for correlated noises is used for stochastic estimation of the navigation parameter vector. The results of numerical modeling of the proposed navigation algorithm illustrate the possibility of its effective practical application.



13.
ON THE PROBLEM OF DATA TRANSFER ORGANIZATION FOR SOLVING THE PROBLEM OF EARLY DETECTION OF FOREST FIRES IN HARD-TO-ACCESS TERRITORIES

E.V. Vaits, P.A. Mikhalev, D.P. Posevin, A.S. Tolpygin
Bauman Moscow State Technical University, Moscow, Russia
Keywords: ad-hoc network, MANET networks, forest fires, monitoring of hard-to-reach areas, video monitoring, fire detection

Abstract >>
This work deals with the problem of remote monitoring of forest areas in hard-to-reach places for early detection of fires. The analysis of methods and technologies of automation of this process is carried out, including the use of unmanned aerial vehicles and neural network algorithms for detecting flames and smoke on images obtained from remote operational monitoring cameras. A solution is proposed for organizing wireless communication and transmitting information to operational response centers based on a prototype of an energy-efficient ad-hoc network, which can be used under conditions of limitations imposed by terrain topography, remoteness and size of the territory, and allows for taking into account weather conditions and various geographical features of the region where video surveillance is being organized. The paper presents the results of testing both the prototype of the entire fire detection information system and the throughput of the ad-hoc network created during the research. Conclusions are drawn about the prospects for the development of the proposed hardware and software complex.