IR-PHOTOLUMINESCENCE OF SILICON IRRADIATED WITH SWIFT HEAVY Xe IONS, AFTER ANNEALING
S.G. Cherkova1, V.A. Volodin1,2, V.A. Skuratov3,4,5, M. Stoffel6, H. Rinnert6, M. Vergnat6
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Joint Institute for Nuclear Research, Dubna, Russia
4National Research Nuclear University MEPhI, Moscow, Russia
5Dubna State University, Dubna, Russia
6Universite de Lorraine, CNRS, IJL, Nancy, France
Keywords: photoluminescence, swift heavy ions, defects in silicon
Abstract
The photoluminescence of float-zone silicon irradiated with high-energy xenon heavy ions (167 MeV) has been studied. In the photoluminescence spectra at low temperatures, in addition to the known X, W, W’, and C lines, a wide band appears in the region of 1.3 - 1.5 µm. With an increase in the irradiation dose in the range of 5·1010 - 1013 cm-2, a decrease in the intensity and narrowing of the photoluminescence band is observed with a simultaneous shift of the maximum to the long-wavelength region. During subsequent annealing at temperatures of 400, 500, and 600 oC, changes in photoluminescence spectra are observed, associated with the transformation of the structure of defects in silicon. The temperature dependence of photoluminescence in the range from 10 to 170 K is studied for samples after irradiation with various doses and annealings.
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