NONSTOICHIOMETRIC GERMANOSILICATE FILMS ON SILICON FOR MICROELECTRONICS: MEMRISTORS AND OTHER APPLICATIONS
V. A. Volodin1,2, Zhang Fan2, I. D. Yushkov1,2, Yin Liping2, G. N. Kamaev1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Keywords: nonstoichiometric germanosilicate films, amorphous nanoclusters, metal-insulator-semiconductor structures, memristors, current-voltage characteristics, photocurrent
Abstract
An analysis of the structure of as-deposited films of nonstoichiometric germanosilicate glasses and the transformation of their structure under annealing is carried out using the Raman spectroscopy and IR spectroscopy. It is shown that the structure of the films is stable up to a temperature of 350 oC; under annealing beginning from 400 oC, amorphous germanium clusters are formed in the films. On the basis of these films, metal-insulator-semiconductor structures are fabricated, and prospects for their use in memristors and photodetectors are demonstrated.
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