SIMULATION OF THE CHARGE CARRIER DIFFUSION BY THE MONTE-CARLO METHOD FOR DETERMINING THE SPATIAL RESOLUTION OF INFRARED CADMIUM - MERCURY - TELLURIUM PHOTODETECTORS
A. V. Vishnyakov, V. V. Vasil'ev, I. V. Sabinina, G. Yu. Sidorov, V. A. Stuchinskii
630090, Novosibirsk, prosp. Akademika Lavrentyeva, 13
Keywords: фотоприёмное устройство, фотодиодная матрица, материал кадмий, ртуть, теллур, пространственное разрешение, частотно-контрастная характеристика, фотоэлектрическая связь, диффузия носителей заряда, метод Монте-Карло, изолирующие диоды, photodetector, photodiode matrix, cadmium - mercury - tellurium, spatial resolution, frequency contrast characteristic, photoelectric connection, charge carrier diffusion, Monte Carlo method, isolating diodes
Abstract
Charge carrier diffusion is simulated by the Monte Carlo method in a photosensitive film of cadmium - mercury - tellurium (CMT) based infrared photodetectors for determining the spatial resolution of these photodetectors. Calculation results for matrix and linear photodetectors with differently designed matrix photoelements, including configurations with isolating diodes, are given. The calculated data are compared with experimentally measured resolutions of real photodetectors
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