ABSORPTION SPECTRAL CHARACTERISTICS OF INFRARED RADIATION IN SILICON DIOXIDE FILMS FOR THERMAL RADIATION DETECTORS
A. G. Paulish1,2, A.K. Dmitriev2, A. V. Gelfand1, S. M. Pyrgaeva3
1Novosibirsk Branch of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
2Novosibirsk State Technical University, prosp. K. Marksa 20, Novosibirsk, 630073
3Polzunov Altai State Technical University, ul. Lenina 46, Barnaul, 656038
Keywords: инфракрасная техника, приёмники теплового излучения, матрица ячеек Голея, диоксид кремния, ИК-спектроскопия, infrared technology, thermal radiation detectors, Golay cell array, silicon dioxide, IR spectroscopy
Abstract
The absorption spectral characteristics of silicon dioxide films in the IR range (λ =8-14 mu m) were studied to determine the optimal absorber thickness in the matrix structure of Golay microcells in order to design highly sensitive IR radiation detectors. It is shown that the absorption spectrum of SiO2 films deposited by electron-beam evaporation has a multipeak structure in the thickness range up to 2 mkm and differs from the known absorption spectra of bulk silicon dioxide, which is apparently due to rearrangements in the film stoichiometry at the initial stages of film formation. Experiments have shown that the integrated absorption in deposited films in a given spectral range is close to a linear dependence on thickness and an order of magnitude smaller than the value obtained by calculation based on literature data for bulk SiO2
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