GROWTH OF ALGAN:SI HETEROSTRUCTURES WITH BRAGG MIRRORS FOR THE BLUE-GREEN SPECTRAL RANGE
I. V. Osinnykh, T.V. Malin, D. S. Milakhin, I. A. Alexandrov, K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, prosp. Akad. Lavrent'eva 13, Novosibirsk, 630090
Keywords: AlGaN, GaN, AlN, аммиачная МЛЭ, брэгговские зеркала, ammonia MBE, Bragg mirrors
Abstract
The paper presents the results of calculation and growth of AlGaN/AlN heteroepitaxial structures with Bragg mirrors for the blue-green spectral range corresponding to the maximum broadband luminescence of the AlGaN:Si layers by molecular beam epitaxy from ammonia. Structures with an active AlGaN: Si region located on one lower Bragg mirror for a wavelength of 510 nm and between two Bragg mirrors for a wavelength of 510 nm were grown. For both heteroepitaxial structures, selection of the radiation of the active layer in the given spectral range by the lower Bragg mirrors was demonstrated. It is shown that a large total thickness of the heterostructure with two Bragg mirrors leads to cracks and macroscopic defects on the surface of the heteroepitaxial structure
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