PLASMON-ENHANCED NEAR-FIELD OPTICAL SPECTROSCOPY OF MULTICOMPONENT SEMICONDUCTOR NANOSTRUCTURES
K. V. Anikin1, A. G. Milekhin1,2, M. Rahaman3, T. A. Duda1, I. A. Milekhin1, E. E. Rodyakina1,2, R. B. Vasil'ev4, V. M. Dzhagan5,6, D. R. T. Zahn3, A. V. Latyshev1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, prosp. Akad. Lavrent'eva 13, Novosibirsk, 630090
2Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090
3Semiconductor Physics, Chemnitz University of Technology, D-09107, Reichenhainer str. 70, Chemnitz, Germany
4Lomonosov Moscow State University, Leninskie Gory 1, Moscow, 119991
5Lashkaryov Institute of Semiconductor Physics, National Academy of Scienes of Ukraine, pr. Nauki 41, Kyiv, 03028 Ukraine
6Taras Shevchenko National University of Kyiv, ul. Volodymyrska. 64, Kyiv, 01601 Ukraine
Keywords: гигантское комбинационное рассеяние света, наноструктуры, квантовые точки, двумерные структуры, плазмоны, фононы, giant Raman scattering of light, nanostructures, quantum dots, two-dimensional structures, plasmons, phonons
Abstract
A local spectral analysis of multicomponent semiconductor nanostructures was performed based on the giant Raman scattering by semiconductor nanostructures on the surface of an array of Au nanoclusters near the metallized needle of an atomic force microscope. In the gap between the metal nanoclusters and the needle, where a semiconductor nanostructure is located, there is a strong increase in the local electric field (hot spot), resulting in a dramatic amplification of the Raman scattering signal. Unprecedented amplification of the Raman scattering signal by two-dimensional (over 108 for MoS2) and zero-dimensional (106 for CdSe nanocrystals) semiconductor nanostructures was achieved. The use of the method for mapping the Raman scattering of a multicomponent system of MoS2 and CdSe made it possible to identify components with a spatial resolution far exceeding the diffraction limit
|
