WAVEGUIDE STRUCTURES BASED ON STRAINED SILICON FOR PHOTONIC APPLICATIONS
O. I. Semenova1, M. L. Kosinova2, Zhi-Yong Li3, A. A. Nemkova3, Yu-De Yu3
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 13
2Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrent'eva, 3
3Institute of Semiconductors CAS, 100083, China, Beijing, A35 Qing Hua East Road
Keywords: планарные оптические волноводы, напряжённый кремний, нитрид кремния, карбонитрид кремния, спектроскопия комбинационного рассеяния света, planar optical waveguides, strained silicon, silicon nitride, carbonitride, Raman spectroscopy
Abstract
Waveguide microstructures based on strained silicon with the use of carbonitride and silicon nitride films as cladding layers are created. A plasma-enhanced chemical vapor deposition technique is developed, which allows obtaining high values of intrinsic mechanical stresses (about 700 MPa). The strained waveguide structures are characterized by micro-Raman spectrography during a scanning procedure. It is demonstrated that deposition of carbonitride and silicon nitride films induces compressive stresses in the silicon waveguide, which is proved by the shift of the maximum of the main peak of scattering on LO-phonons of silicon toward higher wave numbers. The compressive stresses in the silicon waveguide clad with silicon nitride and carbonitride layers are estimated as 350 and 250 MPa, respectively, which is sufficient for the emergence of nonlinear optical properties of silicon (Pockels effect)
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