INFLUENCE OF THE STEP PROFILE OF A COMPOSITION ON THE FORMATION OF INVERSION IN CADMIUM - MERCURY - TELLURIUM FILMS
V. A. Stuchinskii, A. V. Vishnyakov, G. Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, prosp. Akademika Lavrentyeva, 13
Keywords: фотоприёмное устройство, фотодиодная матрица, кадмий-ртуть-теллур, область пространственного заряда, встроенный заряд, инверсия, photoreceiver, photodiode matrix, cadmium-mercury-tellurium, spatial charge region, embedded charge, inversion
Abstract
Within the framework of ensuring conditions for the normal operation of photoreceiving diode matrices, the influence of the step profile of a composition on the formation of inversion in cadmium - mercury - tellurium (CMT) films under the action of an embedded charge Qi of an insulating dielectric is studied. The problem of the maximum permissible value of Qi, which does not yet form inversion in the system, is analyzed by varying the system parameters: the values of rupture of the zone edges for charge carriers in the CMT, the thickness of the broadband surface CMT layer, temperature, and the doping level of the two-layer CMT film
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