EXPRESS CHARACTERIZATION OF CRYSTALLINE PERFECTION OF CDXHG1-XTE STRUCTURES BY GENERATING THE REFLECTION OF SECOND-HARMONIC PROBING RADIATION
M. F. Stupak1,2, N. N. Mikailov2,3, S. A. Droteskii3,4, M. V. Yakushev3
1Design and Engineering Institute of Scientific Instrumentation, Siberian Branch, Russian Academy of Sciences, Novosibirsk, ul. Russkaya, 41
2Novosibirsk State University, Novosibirsk, ul. Pirogova, 2
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, prosp. Akademika Lavrentyeva, 13
4Tomsk State University, Tomsk, prosp. Lenina, 36
Keywords: кристаллы класса ВЇ43m, вторая гармоника, азимутальные угловые зависимости, подложки GaAs, структуры CdxHg1-xTe, 43m class crystals, second harmonic, azimuthal angular dependences, GaAs substrates, CdHgTe structures
Abstract
This paper presents the results of numerical simulation for 43m class crystals and experimental results for azimuthal angular dependences of polarization components of a signal of a second-harmonic reflected from GaAs substrates with (013) orientation, CdTe/ZnTe/GaAs buffer layers, and CdxHg1-xTe/CdTe/ZnTe/GaAs structures, sequentially grown on these substrates with normal incidence of laser radiation on the sample and azimuthal rotation of its polarization plane. It is revealed from investigating the (013)GaAs substrates and CdTe/ZnTe/GaAs buffer layers that deviations from the base cut (013) relative to angles turn out to be 1-3 in the GaAs substrates and up to 8 in the CdTe/ZnTe/GaAs buffer layers. The observed asymmetry of the minima of angular experimental dependences of the second-harmonic signal in the GaAs substrates is related to stresses. It is assumed on the basis of the experimental data that the tensor components of nonlinear susceptibility of the crystalline structure CdxHg1-xTe significantly exceed similar tensor components in CdTe and GaAs in value
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