SILICON P-N-DIODE BASED ELECTRO-OPTIC MODULATORS
O. V. Naumova, B. I. Fomin, Yu. A. Zhivodkov, E. G. Zaitseva, D. V. Shcheglov, A. V. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: электрооптический модулятор, кремний на изоляторе, волновод, electro-optic modulator, silicon-on-insulator, waveguide
Abstract
A method for forming p-n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a waveguide crest shaped as a smoothed trapezoid, in contrast to the classical technique of creating a waveguide crest by plasma-chemical etching. The main advantages of the approach used are described: controllability and reproducibility of critical structural parameters of the modulators (width and height of the waveguide crest), low surface roughness, and the possibility of using approaches to forming a modulating p-n-diode of combined structure in a ridged waveguide, which is standard for planar technologies.
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