PULSED ION ANNEALING OF GERMANIUM IMPLANTED BY ANTIMONY IONS
R. I. Batalov1, R. M. Bayazitov1, G. A. Novikov1, V. A. Shustov1, N. M. Lyadov1, A. V. Novikov2, P. A. Bushuikin2, N. A. Baidakova2, M. N. Drozdov2, P. A. Yunin2
1Kazan E.K. Zavoisky Physical-Technical Institute, Kazan, Russia
2Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Keywords: германий, сурьма, ионная имплантация, легирование, импульсный ионный отжиг, плавление, кристаллизация, диффузия, плазменное отражение, фотолюминесценция, germanium, antimony, ion implantation, doping, pulsed ion annealing, melting, crystallization, diffusion, plasma reflection, photoluminescence
Abstract
Ge layers heavily doped by a donor impurity are formed by implanting a p-Ge single crystal by two-charge antimony ions (Sb++) with the energy E = 80 keV and the dosage Phi = 1016 cm- 2 with subsequent pulsed annealing of the implanted Ge:Sb layer by powerful ion beams (C+, H+) of nanosecond duration in a liquid phase. The surface morphology and depth profiles of Sb, the crystalline structure of the layer, the concentration of electrically active atoms, and photoluminescence of the Ge:Sb layers are investigated. The data on the Sb depth distribution are compared with the computer simulation results and show good agreement. The obtained results indicate that a high degree of activation of the implanted mixture of Sb (up to 100 %) and an increase in the direct-gap photoluminescence in the heavily doped layer for 300 K with a peak at 0.77 eV
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