Time-Resolved Temperature Field of Monocrystalline Silicon Irradiated by a Millisecond Pulse Laser
G. Ming, T. Yong, G. Xun, Y. Boshi, J. Guangyong
Changchun University of Science and Technology, Changchun, 130022, China
Keywords: лазер с миллисекундной длительностью импульса, импульс, монокристаллический кремний, температурное поле, метод конечных элементов, millisecond laser, pulse, monocrystalline silicon, temperature field, finite element method
Abstract
Based on the thermal conduction equation that takes into account phase changes and the evolution of thermophysical parameters with temperature, laser-induced heating and melting of monocrystalline silicon are studied. The changes in the behavior of silicon temperature at different places within the irradiation spot and at different time instants are investigated by the finite element and finite difference methods for a wide range of energy and duration of millisecond laser pulses with the Gaussian spatial and temporal shapes. The numerical results are compared with the experimental measurements.
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