STRUCTURAL DEFECTS IN SiCxNyHz FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL DEPOSITION FROM HEXAMETHYLDISILAZANE VAPOR
V. R. Shayapov, V. A. Nadolinnyi, S. I. Kozhemyachenko, Yu. M. Rumyantsev, N. I. Fainer
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Keywords: PECVD, пленки, электронный парамагнитный резонанс, гексаметилдисилазан, оборванные связи, кластеры углерода, PECVD, films, electron paramagnetic resonance, hexamethyldisilazane, dangling bonds, carbon clusters
Abstract
By electron paramagnetic resonance spectroscopy the paramagnetic centers are investigated in SiC x N y H z films obtained by plasma-enhanced chemical deposition from hexamethyldisilazane vapor. It is found that the films contain dangling bonds broken at carbon atoms, their concentration considerably increasing with an increase in the deposition temperature. By Raman spectroscopy a deposition temperature range is determined within which the films contain carbon clusters. Similarity in the properties of the films synthesized at high deposition temperatures and the films initially deposited at low temperatures and then annealed is established. The results of the study are interpreted with the use of the known data on the film composition and structure and also the representations described in the literature.
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