TECHNOLOGICAL LIMITATIONS IN READOUT INTEGRATED CIRCUITS FOR INFRARED FOCAL PLANE ARRAYS BASED ON QUANTUM-WELL INFRARED PHOTODETECTORS
M. A. Dem’yanenko, D. G. Esaev, A. I. Kozlov, I. V. Marchishin, V. N. Ovsyuk
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia
Keywords: readout integrated circuit, photocurrent readout circuit, multi-element infrared focal plane array, quantum-well infrared photodetectors
Abstract
This paper presents the physical and technical principles of readout integrated circuit (ROIC) for reading and preprocessing focal plane array signals in the infrared spectral range 8–14 μm. The noise equivalent temperature difference of long-wavelength infrared focal plane arrays based on ROIC with frame integration of signals of multilayer quantum well structures is evaluated. The influence of technological limitations in silicon readout circuits for photo signals on the performance of IR focal plane arrays is analyze for a wide range of parameters of QWIP–based focal plane arrays and CMOS technology design rules.
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