STRUCTURE AND ELECTRONIC PROPERTIES OF THE 3C-SiC/SiGeC/Si(100) HETEROJUNCTION FORMED BY THE VACUUM CHEMICAL EPITAXY METHOD
L. K. Orlov1,2, V. I. Vdovin3, N. L. Ivina1,4, E`. A. Shteinman5, M. L. Orlov1,2, Yu. N. Drozdov2, V. F. Petrova1
1Nizhny Novgorod State Technical University, Nizhny Novgorod, Russia
2Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
3Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
4Russian Presidential Academy of National Economy and Public Administration, Nizhny Novgorod, Russia
5Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
Keywords: кремний, карбиды кремния, германий, гетероструктуры, химическая вакуумная эпитаксия, кристаллографическая структура пленок, морфология поверхности, структура гетероперехода, инфракрасная фотолюминесценция, вольт-амперные характеристики, silicon, silicon carbides, germanium, heterostructures, chemical vacuum epitaxy, crystallographic structure of films, surface morphology, heterojunction structure, infrared photoluminescence, volt-ampere characteristics
Abstract
In the work the properties of grain-oriented layers of the cubic phase of silicon carbide and SiGeC nanoscale basic region formed under them at the inner boundary of the 3C-SiC/SiGeC/Si(100) heterojunction are discussed. The structures are obtained in the process of low-temperature (below 1000 °С) carbidization of the silicon surface in vacuum with the use of molecular beams of hydrides and hydrocarbons. The main attention is focused on the discussion of the composition, microstructure, and surface morphology of the layers. The light-emitting properties of the structures in the band-edge photoluminescence from silicon are studied. The diode characteristics of the heterojunction are also studied. Mathematical modeling methods are employed to investigate the band structure of the heterojunction under different injection level conditions of non-equilibrium charge carriers to the basic region of the system.
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