PREPARATION OF THIN FILMS OF PLATINUM GROUP METALS BY PULSED MOCVD. II. DEPOSITION OF Ru LAYERS
N. B. Morozova, N. V. Gelfond, P. P. Semyannikov, S. V. Trubin, I. K. Igumenov, A. K. Gutakovskii, A. V. Latyshev
Keywords: volatile complexes of ruthenium(II, III) with organic ligands, high-temperature mass spectrometry, thermal decomposition processes, pulsed MOCVD
Pages: 735-743
Abstract
In situ high-temperature mass spectrometry is used to analyze the thermal decomposition of Ru(acac)3 and Ru(nbd)(allyl)2 vapor and possible schemes of thermal transformations on the heated surface. By pulsed MOCVD with in situ mass spectrometric control of deposition processes ultrathin Ru layers with a thickness of several nanometers are obtained. The role of the reaction medium, precursor nature, and deposition temperature in the formation of a nanocrystalline structure of the films is revealed. Ruthenium films with a compact continuous structure are formed from Ru(acac)3 and hydrogen at a deposition temperature of 340°C and below; an increase in the temperature results in the growth of nanogranular Ru layers. Regardless of deposition conditions, from Ru(nbd)(allyl)2 granular nanocrystalline Ru layers are formed.
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