STRUCTURE OF HfO2 FILMS AND BINARY OXIDES ON ITS BASE
T. P. Smirnova, L. V. Yakovkina, V. O. Borisov, V. N. Kichai, V. V. Kaichev, V. V. Kriventsov
Keywords: hafnium dioxide, binary solutions, high-k dielectrics
Pages: 718-724
Abstract
The chemical composition and structure of HfO2 films and binary oxides formed by their doping with aluminum and scandium are analyzed. It is shown that aluminum doping of HfO2 causes film amorphization: at the Al concentration above 30 at.% the film becomes amorphous. Scandium doping of HfO2 modifies the monoclinic structure, and in the Sc concentration range from ~9 at.% to ~14 at.% Sc under non-equilibrium conditions of the CVD process at 600°C a solid solution film of the orthorhombic structure forms.
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