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Journal of Structural Chemistry

2012 year, number 4

X-RAY SPECTROSCOPIC STUDY OF THE ELECTRONIC STRUCTURE OF BORON CARBONITRIDE FILMS OBTAINED BY CHEMICAL VAPOR DEPOSITION ON Co/Si AND CоOx/Si SUBSTRATES

Y. V. Fedoseeva, M. L. Kosinova, S. A. Prokhorova, I. S. Merenkov, L. G. Bulusheva, A. V. Okotrub, F. A. Kuznetsov
Keywords: boron carbonitride, X-ray photoelectron spectroscopy, near-edge X-ray absorption spectroscopy, electronic structure fine structure
Pages: 701-709

Abstract

Boron carbonitride films are synthesized by chemical vapor deposition from a mixture of triethylamine borane and ammonia on a metallic or oxidized cobalt sublayer sprayed over Si(100) substrates. Scanning electron microscopy shows that the surface of a BCxNy/Co/Si sample has a homogeneous fine-grained structure; filamentous entities are found on the surface of the BCxNy/CoOx/Si sample. The electronic structure of the films is investigated by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure spectroscopy (NEXAFS). An analysis of the spectra shows that BCxNy films are composed of graphite and hexagonal boron nitride (h-BN) regions and complex BCхNyOz components with B-C, N-C, B-O, N-O, and C-O bonds. The deposition of the BCxNy film on the oxidized Co sublayer results in an increase in the number of С-О, N-O, B-O, and С-N bonds and a decrease of the graphite and h-BN components and in the number of С-В bonds. The XPS data are used to estimate the surface elemental composition of the BCxNy/CoOx/Si sample. It is found that the film consists of 66 at.% graphite component and 3 at.% h-BN; the proportion of complex С0.46B0.11N0.05O0.38 components is 31 at.%.