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Journal of Structural Chemistry

2010 year, number 1

Electronic structure of Pu3+ and Pu4+ impurity centers in zircon

M. V. Ryzhkov, A. L. Ivanovskii, A. V. Porotnikov, Y. V. Shchapova, S. L. Votyakov
Keywords: cluster calculation, relativistic effects, chemical bond of a Pu impurity with the ZrSiO4 matrix
Pages: 7-14

Abstract

Using a fully relativistic DV cluster method, we study the electronic structure of a large fragment of the crystal lattice of zircon ZrSiO4 with a plutonium dopant atom replacing a Zr4+ zirconium atom. Three possible states of the impurity center are considered: Pu4+ (isovalent substitution), Pu3+ (non-isovalent substitution), and Pu3+ with an oxygen vacancy in the nearest environment that provides charge compensation. Relaxation of the ZrSiO4 crystal lattice near a defect is simulated using a semi-empirical method of atomic pair potentials (GULP program). An analysis of overlap populations and effective charges on atoms shows that the chemical bonding of plutonium with a matrix is covalent, while isovalent substitution yields a more stable system than a Pu3+ impurity. In the presence of vacancies the structure of chemical bonding is intermediate with respect to substitutions Pu4+ → Zr4+ and Pu3+ → Zr4+.