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Avtometriya

2011 year, number 5

Automated System for Measuring Electrical and Recombination-Diffusion Parameters of Charge Carriers in p-Type Mercury-Cadmium-Tellurium Films

B. Y. Kostyuchenko1, D. V. Kombarov1, D. Y. Protasov2
1 Siberian State Geodesic Academy
2 Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
v.y.kostuk@ssga.ru, astrogator@list.ru, protasov@thermo.isp.nsc.ru
Keywords: photoelectromagnetic methods, recombination-diffusion parameters, films and film structures of narrow-gap semiconductors
Pages: 122-129

Abstract

This paper describes an automated photoelectromagnetic set of instrumental and methodological tools designed to determine the electrical and recombination-diffusion parameters of charge carriers in epitaxial films and p-type mercury-cadmium-tellurium film structures with thickness comparable to the diffusion length of minority carriers. The complex includes the following methods: the Hall effect, magnetoresistance, the photomagnetic effect, and photoconductivity in a magnetic field for the Faraday and Voigt geometries. The following parameters were determined: equilibrium concentration, the mobility of majority and minority charge carriers (holes and electrons, respectively), the bulk lifetimes electrons and holes, surface recombination velocities on the free boundary of the film and the interface with the substrate.