Home – Home – Jornals – Avtometriya 2011 number 5

Optical properties of Ga- and N-polar triple nitrides Al_xGa_1−xN with molar fractions of aluminum from 0 to 0.6 are studied by a nondestructive contactless method of spectroscopic ellipsometry. Correlation dependences of the shift of the fundamental absorption edge and the behavior of the real and imaginary parts of the pseudodielectric function on the composition x and polarity of the Al_xGa_1−xN layers are revealed. It is verified that the polarity of the layers grown by molecular beam epitaxy is defined by the formation of the AlN nucleating layer.