Estimation of the Ultimate Efficiency of a Three-Pin Solar Cell Based on the GaAs/Si Heterostructure
D. O. Kuznetsov, E. G. Tishkovskii, D. M. Legan
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
diokuz@thermo.isp.nsc.ru, tish@thermo.isp.nsc.ru
Keywords: ultimate efficiency, solar cell, GaAs/Si heterostructures
Pages: 78-81
Abstract
The ultimate efficiency of a three-pin solar cell based on the GaAs/Si structure is calculated by means of numerical simulation in a diffusion-drift approximation. Dependences of the efficiency on the GaAs layer thickness and the density of dislocations threading in this layer, which are known to affect the lifetime of nonequilibrium charge carriers. It is shown that the maximum limit efficiency (27 %) of such a structure is reached at the GaAs layer thickness of about 1.4 µm and the density ofthreading dislocations of less than 106 cm−2.
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