Formation of Type-II InAs/GaSb Strained Short-Period Superlattices for IR Photodetectors by Molecular Beam Epitaxy
E. A. Emel'yanov, D. F. Feklin, A. V. Vasev, M. A. Putyato, B. R. Semyagin, A. P. Vasilenko, O. P. Pchelyakov, V. V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
e2a@nsc/ru, fdf@isp.nsc.ru, vasev@isp.nsc.ru, puma@isp.nsc.ru, sbr@isp.nsc.ru, vap@isp.nsc.ru, pch@isp.nsc.ru, pvv@isp.nsc.ru
Keywords: molecular-beam epitaxy, molecular shape arsenic, short-period superlattice, IR photodetectors, reflection high-energy electron diffraction (RHEED)
Pages: 43-51
Abstract
The interaction of the GaSb(001) surface with fluxes of As2, As4, and Sb4 molecules is studied using reflection high-energy electron diffraction. It is shown that As2 molecules interact with a GaSb surface predominantly by an exchange mechanism, and As4 molecules by the vacancy mechanism. It is established that for the reproducible generation of In-Sb heterointerfaces in InAs/GaSb superlattices, one needs to use a flux of As4 molecules rather than As2 molecules.
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