Effect of Electron Trapping Centers on Electrical and Photoelectric Properties of PbSnTe : In
A. E. Klimov, V. N. Shumsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences klimov@thermo.isp.nsc.ru
Keywords: trapping centers, PbSnTe : In, injection from contacts
Pages: 35-42
Abstract
Results of experimental studies presenting data on the effect of electron trapping centers on the properties of Pb1−xSnxTe : In with x ≈ 0.24-0.29 at temperatures below 20 K are described. A model is developed that consistently explains a number of phenomena in Pb1−xSnxTe : In solid solutions, including current-voltage characteristics in the absence of light resulting from the injection from contacts and space-charge limited current when electrons are captured in traps distributed in energy in the bandgap, photoelectric phenomena in the infrared and terahertz spectral ranges, features of galvanomagnetic phenomena, and fluctuations and autooscillations of current in the absence or presence of light.
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