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Avtometriya

2011 year, number 5

Emitters Based on Semiconductor Bragg Microcavities

V. A. Haisler, I. A. Derebezov, A. I. Toropov, I. I. Ryabtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
haisler@thermo.isp.nsc.ru, derebezov@thermo.isp.nsc.ru, toropov@thermo.isp.nsc.ru, ryabtsev@isp.nsc.ru
Keywords: vertical-cavity laser, miniature atomic frequency standard, single-photon emitter
Pages: 25-31

Abstract

This paper presents a brief review of the progress in the development of two types of semiconductor emitters based on semiconductor Bragg microcavities. The first type of these emitters is a vertical-cavity laser based on AlxGa1−xAs. The laser demonstrates stable single-mode lasing ata wavelength of 795 nm, which opens prospects for its use in miniature atomic frequency standards on the basis of Rb87. The second type is a single-photon emitter based on semiconductor quantum dots. The design of such an emitter was developed on the basis of a semiconductor Bragg microcavity providing a high level of external quantum efficiency of the emitter (up to 80%) and high performance due to the Purcell effect.