Home – Home – Jornals – Avtometriya 2007 number 4

A microwave detector including a single-element infrared (IR) photodiode mounted in a cooled Dewar and a preamplifier is developed. An IR photodiode of the n⁺

A technology of growing variband P

Problems of using charge-injected devices in hybrid infrared focal plane arrays are considered.

Results of experimental investigation of thermography systems based on InAs CID elements of line and matrix hybrid modules (a thermal imager and IR microscope) are presented. Owing to a high time stability, in the short-wave IR range, the implemented thermography systems have a temperature resolution of ~(4

A design and parameters of the IR spectrograph based on an MS2004I monochromator-spectrograph and a hybrid microcircuit of a one-dimensional 1

A time delay-integration (TDI) readout circuit for implementing IR FPA with an arbitrary number of TDI stages is considered.

Principles of operation of large-scale photodetector arrays for image visualization in a submillimeter spectral range are considered. Parameters of a thermal picture produced on an intermediate screen by a submillimeter component of radiation of an object with a temperature of about 300 K are estimated. Photodetector array parameters required for registration of the intermediate screen radiation are analyzed. The possibility of creating large-scale photodetector arrays on PbSnTe : In films for imaging objects with a room temperature without additional submillimeter illumination is shown.

Principles of designing and functioning the 320

Admittance of MOS structures based on Hg₁

Results of measuring the current-voltage characteristics of diodes with a control electrode are presented. The diodes are based on graded energy-gap Cd_0.22Hg_0.78Te (MCT) layers grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate. The diodes are designed for the IR radiation photodetectors with the cutoff wavelength l_c = 10 mm. It is shown that the surface currents contribute substantially to the reverse currents of MBE MCT photodiodes during enrichment and depletion. A critical built-in charge density value for which the surface leakage level is under 20% of bulk current is obtained.

A simple method is proposed for determining the critical pressure that does not destroy Cd_xHg₁

HgTe/Cd_0.735Hg_0.265 nanostructures with HgTe quantum wells 16.2 and 21.0 nm thick are grown without additional doping on (013)CdTe/ZnTe/GaAs substrates by the method of molecular beam epitaxy. The compositions and thicknesses of the wide-gap layer and quantum well in the course of growth are performed by means of ellipsometry. The accuracy is Dx ≈

An infrared 320