SILICON MULTIPLEXERS FOR MULTIELEMENT IR PHOTODETECTORS
A.I.Kozlov, I.V.Marchishin, V.N.Ovsyuk, and V.V.Shashkin
Novosibirsk
Pages: 74-83
Abstract
Principles of designing silicon multiplexers for line and array infrared photodetectors are considered. A unified series of 13 multiplexers designed for joint operation with multielement photodiode MCT photodetectors, multielement photoresistive photode- tectors based on multilayer structures with quantum wells, and with other types of photodetectors with spectral sensitivity in IR ranges of 8
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