Home – Home – Jornals – Avtometriya 2005 number 1

The initial stages of formation of ZnTe epitaxial films on Si(013) : As are investigated by ellipsometry, reflection high-energy electron diffraction (RHEED), and electron Auger spectroscopy. It is shown that the kinetics of ZnTe film growth is described by the crystal nucleation and growth model. The temperature dependence of the nucleation rate J is adequately approximated by a straight line in the coordinates  ; this evidences the limiting role of critical nucleus dimension formation. The calculated increase of the surface energy while ZnTe nucleating is 40 erg/cm. The estimated value of the pure ZnTe(001) surface energy is 490 erg/cm. The difference between two energy values can be caused by adsorption of the deposited material components, which reduces the excess energy of the surface increasing process.