Development of nanotechnologies and their application to designing semiconductor electronics devices
Yu.G.Sidorov, A.I.Toropov, V.V.Shashkin, V.N.Ovsyuk, V.A.Gaisler, A.K.Gutakovskii, A.V.Latyshev, V.A.Tkachenko, Z.D.Kvon, A.V.Dvurechenskii, O.P.Pchelyakov, V.Ya.Prinz, V.P.Popov, and A.L.Aseev
Novosibirsk
Pages: 4–15
Abstract
Results on development of the molecular beam epitaxy technology and the silicon-on-insulator structure technology as applied to designing a new generation of IR photodetector devices, vertical cavity lasers, quantum dot transistors and photodetectors, quantum electronic interferometers, and nanotransistors are reviewed. Results of using the method of self-assembled strained epitaxial heterostructures and probe nanolithography for fabricating nanoobjects are shown. Data on the nanoobject structure, which were obtained by transmission electron microscopy, atomic force microscopy, and scanning tunnel microscopy of atomic resolution, are presented. The capabilities of nanotechnologies for solving the main tasks of present-day semiconductor electronics are analyzed.
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