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Avtometriya

2004 year, number 1

CREATION OF PAIRS OF CLOSE DEFECTS IN ACTIVATED ALKALI HALIDE CRYSTALS UNDER UV LIGHT AT LOW TEMPERATURES

I. K .Plavina and M. F. Trinkler
Riga, Latvia
Pages: 91–100

Abstract

The action of two spectral regions of UV light is compared from the viewpoint of defect creation and practical application of the created defects to image recording. A local near-activator anion excitation is created in one of the UV light regions in the - absorption band. This excitation at the final stage of transformation leads to creation of pairs of close defects where the activator hole center is created by ionization of the activator near which the light -quantum was absorbed. Electron centers arise in the process when the shallow traps initiated by the -centers are filled with electrons from the foregoing ionized activator. Excitation arises in another UV region (absorption band of 1s exciton) in the regular lattice. At the moment of origination it is associated with neither the activator nor the activator hole center. However, as a result of migration and relaxation this excitation also creates pairs of close defects on the basis of -centers already available in the crystal. Exciton polaritons are probably responsible for creation of the pairs The pairs of close defects can be used for image processing by photostimulated luminescence, each type of pairs gives different characteristics.